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High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018)

First Author: Cheng T

Attributed to: Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.5011280

Publication URI: http://dx.doi.org/10.1116/1.5011280

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Issue: 2