A novel source of atomic hydrogen for passivation of defects in silicon A novel source of atomic hydrogen for passivation of defects in Si (2017)

First Author: Hamer P

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssr.201600448

Publication URI: http://dx.doi.org/10.1002/pssr.201600448

Type: Journal Article/Review

Parent Publication: physica status solidi (RRL) - Rapid Research Letters

Issue: 5