On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements (2017)

First Author: Bonilla R
Attributed to:  SuperSilicon PV: extending the limits of material performance funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4979722

Publication URI: http://dx.doi.org/10.1063/1.4979722

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 13