📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices. (2017)

First Author: Bean JJ

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/srep45594

PubMed Identifier: 28374755

Publication URI: http://europepmc.org/abstract/MED/28374755

Type: Journal Article/Review

Volume: 7

Parent Publication: Scientific reports

ISSN: 2045-2322