Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors (2018)

First Author: Tang F

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5006255

Publication URI: http://dx.doi.org/10.1063/1.5006255

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 2

ISSN: 0021-8979