A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018)
Attributed to:
Underpinning Power Electronics 2012: Components Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2017.2669879
Publication URI: http://dx.doi.org/10.1109/tpel.2017.2669879
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Power Electronics
Issue: 1