Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO 3 Passivation Interface (2018)
Attributed to:
REACTIVE PLASMONICS: OPTICAL CONTROL OF ELECTRONIC PROCESSES AT INTERFACES FOR NANOSCALE PHYSICS, CHEMISTRY AND METROLOGY
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/adfm.201705829
Publication URI: http://dx.doi.org/10.1002/adfm.201705829
Type: Journal Article/Review
Parent Publication: Advanced Functional Materials
Issue: 17