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High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. (2017)

First Author: Zhang J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma10030319

PubMed Identifier: 28772679

Publication URI: http://europepmc.org/abstract/MED/28772679

Type: Journal Article/Review

Volume: 10

Parent Publication: Materials (Basel, Switzerland)

Issue: 3

ISSN: 1996-1944