High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. (2017)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/ma10030319
PubMed Identifier: 28772679
Publication URI: http://europepmc.org/abstract/MED/28772679
Type: Journal Article/Review
Volume: 10
Parent Publication: Materials (Basel, Switzerland)
Issue: 3
ISSN: 1996-1944