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InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation (2018)

First Author: Muttlak S

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2018.2797951

Publication URI: http://dx.doi.org/10.1109/jeds.2018.2797951

Type: Journal Article/Review

Parent Publication: IEEE Journal of the Electron Devices Society