High-Performance Resistance Switching Memory Devices Using Spin-On Silicon Oxide (2018)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2017.2789019
Publication URI: http://dx.doi.org/10.1109/tnano.2017.2789019
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Nanotechnology
Issue: 5