Photoluminescence studies of cubic GaN epilayers (2017)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201600733
Publication URI: http://dx.doi.org/10.1002/pssb.201600733
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 8