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High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology (2017)

First Author: Jankovic N

Attributed to: Underpinning Power Electronics 2012: Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2017.2693559

Publication URI: http://dx.doi.org/10.1109/led.2017.2693559

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 6

ISSN: 07413106