Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography (2017)
Attributed to:
Imperial College London - Equipment Account
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2638499
Publication URI: http://dx.doi.org/10.1109/ted.2016.2638499
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 5