Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air (2016)
Attributed to:
Vehicle Electrical Systems Integration (VESI)
funded by
UKRI
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.557
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.557
Type: Journal Article/Review
Parent Publication: Materials Science Forum