Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air (2016)

First Author: Hamilton D
Attributed to:  Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.557

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.557

Type: Journal Article/Review

Parent Publication: Materials Science Forum