Total Dose Effects and Bias Instabilities of (NH 4 ) 2 S Passivated Ge MOS Capacitors With Hf x Zr 1-x O y Thin Films (2017)

First Author: Mu Y
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tns.2017.2768566

Publication URI: http://dx.doi.org/10.1109/tns.2017.2768566

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nuclear Science

Issue: 12