On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements (2017)
Attributed to:
Improved surface passivation for semiconductor solar cells
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4979722
Publication URI: http://dx.doi.org/10.1063/1.4979722
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 13