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Demonstration of the donor characteristics of Si and O defects in GaN using hybrid QM/MM Demonstration of the donor characteristics of Si and O defects in GaN (2017)

First Author: Xie Z

Attributed to: HPC simulations of complex solids and clusters using static lattice techniques funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600445

Publication URI: http://dx.doi.org/10.1002/pssa.201600445

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 4