Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices. (2016)
Attributed to:
MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1098/rspa.2016.0009
PubMed Identifier: 27436969
Publication URI: http://europepmc.org/abstract/MED/27436969
Type: Journal Article/Review
Volume: 472
Parent Publication: Proceedings. Mathematical, physical, and engineering sciences
Issue: 2190
ISSN: 1364-5021