Hyperfine Stark effect of shallow donors in silicon (2014)
Attributed to:
Materials World Network: Spin entanglement using transient electrons in C and Si-based materials
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.90.195204
Publication URI: http://dx.doi.org/10.1103/physrevb.90.195204
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 19
ISSN: 1098-0121