Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. (2018)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1364/oe.26.003568
PubMed Identifier: 29401884
Publication URI: http://europepmc.org/abstract/MED/29401884
Type: Journal Article/Review
Volume: 26
Parent Publication: Optics express
Issue: 3
ISSN: 1094-4087