Demonstration of the donor characteristics of Si and O defects in GaN using hybrid QM/MM Demonstration of the donor characteristics of Si and O defects in GaN (2017)
Attributed to:
Energy Materials: Computational Solutions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600445
Publication URI: http://dx.doi.org/10.1002/pssa.201600445
Type: Journal Article/Review
Parent Publication: physica status solidi (a)
Issue: 4
ISSN: 1862-6300