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A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs (2017)

First Author: Fayyaz A

Attributed to: Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/en10040452

Publication URI: http://dx.doi.org/10.3390/en10040452

Type: Journal Article/Review

Parent Publication: Energies

Issue: 4

ISSN: 19961073