A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs (2017)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/en10040452
Publication URI: http://dx.doi.org/10.3390/en10040452
Type: Journal Article/Review
Parent Publication: Energies
Issue: 4
ISSN: 19961073