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The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices (2017)

First Author: Gammon P

Attributed to: Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.897.747

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.897.747

Type: Journal Article/Review

Parent Publication: Materials Science Forum