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Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation (2016)

First Author: Chan C

Attributed to: Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.858.844

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.858.844

Type: Journal Article/Review

Parent Publication: Materials Science Forum