Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model (2016)
Attributed to:
Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.94.245431
Publication URI: http://dx.doi.org/10.1103/physrevb.94.245431
Type: Journal Article/Review
Parent Publication: Physical Review B
Issue: 24
ISSN: 2469-9950