An experimental comparison of GaN, SiC and Si switching power devices (2017)

First Author: Palmer P
Attributed to:  High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/iecon.2017.8216135

Publication URI: http://dx.doi.org/10.1109/iecon.2017.8216135

Type: Conference/Paper/Proceeding/Abstract