An experimental comparison of GaN, SiC and Si switching power devices (2017)
Attributed to:
High Current Module and Technologies Optimised for HVDC
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/iecon.2017.8216135
Publication URI: http://dx.doi.org/10.1109/iecon.2017.8216135
Type: Conference/Paper/Proceeding/Abstract