Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals. (2015)

First Author: Buckeridge J
Attributed to:  CCP5: The Computer Simulation of Condensed Phases funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevlett.114.016405

PubMed Identifier: 25615487

Publication URI: http://europepmc.org/abstract/MED/25615487

Type: Journal Article/Review

Volume: 114

Parent Publication: Physical review letters

Issue: 1

ISSN: 0031-9007