SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications (2017)
Attributed to:
High Current Module and Technologies Optimised for HVDC
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.23919/ispsd.2017.7988890
Publication URI: http://dx.doi.org/10.23919/ispsd.2017.7988890
Type: Conference/Paper/Proceeding/Abstract