SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications (2017)

First Author: Jiang H

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.23919/ISPSD.2017.7988890

Publication URI: http://dx.doi.org/10.23919/ISPSD.2017.7988890

Type: Conference/Paper/Proceeding/Abstract