Heteroepitaxial Beta-Ga 2 O 3 on 4H-SiC for an FET With Reduced Self Heating (2017)
Attributed to:
High Current Module and Technologies Optimised for HVDC
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2017.2706321
Publication URI: http://dx.doi.org/10.1109/jeds.2017.2706321
Type: Journal Article/Review
Parent Publication: IEEE Journal of the Electron Devices Society
Issue: 4
ISSN: 21686734