Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO 2 / Al 2 O 3 Gate Stack (2018)
Attributed to:
Underpinning Power Electronics 2012: Devices Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2807620
Publication URI: http://dx.doi.org/10.1109/led.2018.2807620
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 4