Strain engineering of the silicon-vacancy center in diamond (2018)

First Author: Meesala S
Attributed to:  UK Quantum Technology Hub: NQIT - Networked Quantum Information Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.97.205444

Publication URI: http://dx.doi.org/10.1103/physrevb.97.205444

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 20