High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires. (2018)
Attributed to:
III-V Semiconductor Nanowires: Attaining Control over Doping and Heterointerfaces
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.8b00842
PubMed Identifier: 29717874
Publication URI: http://europepmc.org/abstract/MED/29717874
Type: Journal Article/Review
Volume: 18
Parent Publication: Nano letters
Issue: 6
ISSN: 1530-6984