Engineering p - n junctions and bandgap tuning of InSe nanolayers by controlled oxidation (2017)
Attributed to:
Two dimensional III-VI semiconductors and graphene-hybrid heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/2053-1583/aa61e0
Publication URI: http://dx.doi.org/10.1088/2053-1583/aa61e0
Type: Journal Article/Review
Parent Publication: 2D Materials
Issue: 2