High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. (2018)

First Author: Cheng TS
Attributed to:  Strain-engineered graphene: growth, modification and electronic properties funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma11071119

PubMed Identifier: 29966333

Publication URI: http://europepmc.org/abstract/MED/29966333

Type: Journal Article/Review

Volume: 11

Parent Publication: Materials (Basel, Switzerland)

Issue: 7

ISSN: 1996-1944