The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (2018)
Attributed to:
Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/qute.201800038
Publication URI: http://dx.doi.org/10.1002/qute.201800038
Type: Journal Article/Review
Parent Publication: Advanced Quantum Technologies
Issue: 2