Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states (2018)
Attributed to:
Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5036718
Publication URI: http://dx.doi.org/10.1063/1.5036718
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 3