Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study (2018)
Attributed to:
Quantum Electronics Device Modelling (QUANTDEVMOD)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2859586
Publication URI: http://dx.doi.org/10.1109/led.2018.2859586
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 9