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A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets (2019)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2018.2870067

Publication URI: http://dx.doi.org/10.1109/tpel.2018.2870067

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Power Electronics

Issue: 6