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Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates (2018)

First Author: González Burguete C

Attributed to: Development of Type II Superlattice IR Detectors Monolithically Integrated on Silicon Substrates. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/iet-opt.2017.0078

Publication URI: http://dx.doi.org/10.1049/iet-opt.2017.0078

Type: Journal Article/Review

Parent Publication: IET Optoelectronics

Issue: 1