Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth (2017)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201600666
Publication URI: http://dx.doi.org/10.1002/pssb.201600666
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 8