Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth (2017)

First Author: Massabuau F

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201600666

Publication URI: http://dx.doi.org/10.1002/pssb.201600666

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 8