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Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2 (2018)

First Author: Lu H

Attributed to: Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5008959

Publication URI: http://dx.doi.org/10.1063/1.5008959

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 6