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Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities (2018)

First Author: Christian G

Attributed to: Lighting the Future funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.98.155301

Publication URI: http://dx.doi.org/10.1103/physrevb.98.155301

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 15