Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon (2018)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.5011161
Publication URI: http://dx.doi.org/10.1063/1.5011161
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 21