Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon (2018)

First Author: Li W
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5011161

Publication URI: http://dx.doi.org/10.1063/1.5011161

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 21