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Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher (2018)

First Author: Abdulwahid O

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/iet-opt.2017.0068

Publication URI: http://dx.doi.org/10.1049/iet-opt.2017.0068

Type: Journal Article/Review

Parent Publication: IET Optoelectronics

Issue: 1