Increasing Maximum Gain in InAs Quantum Dot Lasers on GaAs and Si (2018)

First Author: Shutts S
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ipcon.2018.8527302

Publication URI: http://dx.doi.org/10.1109/ipcon.2018.8527302

Type: Conference/Paper/Proceeding/Abstract