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Characterisation of InGaN by Photoconductive Atomic Force Microscopy. (2018)

First Author: Weatherley TFK

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma11101794

PubMed Identifier: 30248899

Publication URI: http://europepmc.org/abstract/MED/30248899

Type: Journal Article/Review

Volume: 11

Parent Publication: Materials (Basel, Switzerland)

Issue: 10

ISSN: 1996-1944