📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Impact of Disorder on the Optoelectronic Properties of Ga N y As 1 - x - y Bi x Alloys and Heterostructures (2018)

First Author: Usman M

Attributed to: Energy and the Physical Sciences: Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevapplied.10.044024

Publication URI: http://dx.doi.org/10.1103/physrevapplied.10.044024

Type: Journal Article/Review

Parent Publication: Physical Review Applied

Issue: 4