The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers (2018)
Attributed to:
Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aae2ac
Publication URI: http://dx.doi.org/10.1088/1361-6641/aae2ac
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 11